Pentacene-based low voltage organic field-effect transistors with anodized Ta2O5 gate dielectric

被引：25

作者：

Jeong, Yeon Taek ^{[1
]}

Dodabalapur, Ananth ^{[1
]}

机构：

[1] Univ Texas, Microelect Res Ctr, Austin, TX 78758 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 19期

关键词：

D O I：

10.1063/1.2806914

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Pentacene-based low voltage organic field-effect transistors were realized using an anodized Ta2O5 gate dielectric. The Ta2O5 gate dielectric layer with a surface roughness of 1.3 A was obtained by anodizing an e-beam evaporated Ta film. The device exhibited values of saturation mobility, threshold voltage, and I-on/I-off ratio of 0.45 cm(2)/V s, 0.56 V, and 7.5x10(1), respectively. The gate leakage current was reduced by more than 70% with a hexamethyldisilazane (HMDS) treatment on the Ta2O5 layer. The HMDS treatment also resulted in enhanced mobility values and a larger pentacene grain size.

引用

页数：3

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