Electrical, magnetic, and structural properties of Sn1-xMnxTe layers grown by molecular beam epitaxy

被引：5

作者：

Nadolny, AJ ^{[1
]}

Sadowski, J ^{[1
]}

Story, T ^{[1
]}

Dobrowolski, W ^{[1
]}

Arciszewska, M ^{[1
]}

Swiatek, K ^{[1
]}

Kachniarz, J ^{[1
]}

Adamczewska, J ^{[1
]}

机构：

[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

来源：

ACTA PHYSICA POLONICA A | 1998年 / 94卷 / 03期

关键词：

D O I：

10.12693/APhysPolA.94.449

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Layers of Sn1-xMnxTe (x less than or equal to 0.1) with thickness 0.2-2 mu m were grown by molecular beam epitaxy on BaF2 substrates with a 0.01-1 mu m thick SnTe buffer layer. Both SnTe and Sn1-xMnxTe layers show metallic p-type conductivity with conducting hole concentrations (at T = 77 K) p(77) = 7 x 10(19) -2 x 10(21) cm(-3). The layers grown under the conditions of an extra Te flux have a high carrier concentration and exhibit ferromagnetic phase transition at T-C less than or equal to 7 K. The layers grown with no (or very low) additional Te flux show low carrier concentrations (below 10(20) cm(-3)) and remain paramagnetic in the temperature range studied T = 4.5 divided by 70 K.

引用

页码：449 / 453

页数：5

共 5 条

[1] CARRIER-INDUCED BREAKDOWN OF FERROMAGNETISM [J].