Electrochemical deposition of MoS2 thin films by reduction of tetrathiomolybdate

被引：130

作者：

Ponomarev, EA

NeumannSpallart, M

Hodes, G

LevyClement, C

机构：

[1] CNRS,PHYS SOLIDES BELLEVUE LAB,UPR 1332,F-92195 MEUDON,FRANCE

[2] WEIZMANN INST SCI,DEPT MAT & INTERFACES,IL-76100 REHOVOT,ISRAEL

来源：

THIN SOLID FILMS | 1996年 / 280卷 / 1-2期

关键词：

electrochemistry; semiconductors; molybdenum disulphide; deposition process;

D O I：

10.1016/0040-6090(95)08204-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Molybdenum sulphide was cathodically electrodeposited from aqueous solutions of sodium tetrathiomolybdate. The as-deposited films were X-ray amorphous with a composition, measured by microprobe analysis, close to MoS2. Annealing these films in Ar resulted in highly-textured films of MoS, with the van der Waals planes parallel to the substrate. A small expansion in the c spacing of the annealed films was explained by the presence of oxygen in the crystals. A direct bandgap of 1.78 eV was found for the annealed films.

引用

页码：86 / 89

页数：4

共 15 条

[1] OPTICAL STUDY OF AMORPHOUS MOS3 - DETERMINATION OF THE FUNDAMENTAL ENERGY-GAP [J].