Effect of material parameters on the quantum efficiency of GaInAsSb detectors

被引：7

作者：

Tian, Y ^{[1
]}

Zhou, TM ^{[1
]}

Zhang, BL ^{[1
]}

Jiang, H ^{[1
]}

Jin, YX ^{[1
]}

机构：

[1] Chinese Acad Sci, Changchun Inst Phys, Changchun 130021, Peoples R China

来源：

SOLID-STATE ELECTRONICS | 1999年 / 43卷 / 03期

关键词：

D O I：

10.1016/S0038-1101(98)00294-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a theoretical study of the effect of material parameters on the quantum efficiency of a homogeneous GaInAsSb infrared photovolatic detector is presented. The considerations are carried out for the near room temperature and 2.5 mu m wavelength. The calculated results show that the quantum efficiency depends strongly on the carrier concentrations in the n- and p-regions. In addition, the absorption coefficient, the surface recombination velocities and the widths of the two regions also effect the quantum efficiency. (C) 1999 Elsevier Science Ltd. All rights reserved.

引用

页码：625 / 631

页数：7

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