Structural properties of SrWO4 films synthesized by pulsed-laser deposition

被引:26
作者
Huang, JY [1 ]
Jia, QX
机构
[1] Los Alamos Natl Lab, Mat Sci & Technol Div, Los Alamos, NM 87545 USA
[2] Boston Coll, Dept Phys, Chestnut Hill, MA 02467 USA
关键词
thin films; pulsed-laser deposition; HREM; strontium tungstate;
D O I
10.1016/S0040-6090(03)01026-5
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Epitaxial SrWO4 films were successfully deposited with or without a buffer layer on the sapphire substrate by pulsed-laser deposition. The interface structures were characterized by high resolution electron microscopy (HREM), and it indicated that the film deposited on a CeO2 buffer layer shows a much better epitaxy than that deposited directly on the substrate, because of the small lattice mismatch between the film and the buffer layer. HREM also revealed definite orientation relationship among the film, the buffer layer, and the substrate, i.e. [(1) over bar 10](00 (4) over bar)(SrWO4)//[1 (1) over bar0](002)(CeO3)//[20 (12) over bar]((1) over bar 10 (2) over bar)(sapphire). (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:95 / 98
页数:4
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