Broad-band amplification using a novel amplifier topology

被引：7

作者：

Di Muro, R

Lowe, D

Wilson, S

机构：

[1] Nortel Networks Ltd, Harlow Labs, Harlow CM17 9NA, Essex, England

[2] Univ London Imperial Coll Sci Technol & Med, London SW7 2BZ, England

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2001年 / 13卷 / 10期

关键词：

erbium-doped silica fibers; erbium-doped tellurite fiber amplifiers; extended band amplification; optical amplifiers;

D O I：

10.1109/68.950739

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new broad-band amplifier topology that provides a continuous gain across 75 mn (1528-1603 nm) of optical bandwidth using Er3+-doped SiO2 fiber is demonstrated. The noise figure is low and does not present any discontinuity across the entire amplification bandwidth. The topology has a buried 1550/1585-nm splitter to reduce input signal loss and to provide amplified spontaneous emission suppression. The topology has been optimized using hybrid fiber; Er3+-doped SiO2 for the first stage and Er3+-doped TeO2 for the second stage, achieving 82 nm (1526-1618 run) of optical bandwidth.

引用

页码：1073 / 1075

页数：3

共 7 条

[1] The Er3+-fiber gain coefficient derived from a dynamic gain tilt technique [J].