Sintering and grain growth of CoO-doped CeO2 ceramics

被引:115
作者
Zhang, TS
Hing, P
Huang, HT
Kilner, J
机构
[1] Nanyang Technol Univ, Sch Appl Sci, Div Mat Engn, Ctr Adv Mat Res, Singapore 639798, Singapore
[2] Univ London Imperial Coll Sci Technol & Med, Dept Mat, London SW7 2AZ, England
关键词
CeO2; CoO doping; grain growth; microstructure-final; sintering;
D O I
10.1016/S0955-2219(01)00240-0
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Co-doped CeO2 powders with atomic ratios equal to 0.25, 1 and 3% were synthesized by the conventional mixed-oxide method. No binary compounds were detected in the CeO2-CoO system, and the Co element exists as the state of Co2+ in the samples sintered above 1000 degreesC. A small amount of Co doping reduces sintering temperatures and promotes grain boundary mobility dramatically. Over 99.0% of relative density (R.D.) can be obtained for 0.25% Co-doped sample sintered at 1300 degreesC for 2 h, compared with similar to 96% of relative density for pure CeO2 sintered at 1525 degreesC for 2 h. The results from grain growth kinetics study indicate that grain growth exponent, n, and activation energy, Q, are 3 and 697 +/- 37 U/mol for pure CeO2, 4 and 572 +/- 57 kJ/mol for 0.25% Co-doped CeO2, respectively. (C) 2001 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:27 / 34
页数:8
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