Optical constants of wurtzite ZnS thin films determined by spectroscopic ellipsometry

被引:174
作者
Ong, HC
Chang, RPH
机构
[1] City Univ Hong Kong, Dept Elect Engn, Hong Kong, Hong Kong, Peoples R China
[2] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA
关键词
D O I
10.1063/1.1419229
中图分类号
O59 [应用物理学];
学科分类号
摘要
The complex dielectric functions of wurtzite ZnS thin films grown on (0001) Al2O3 have been determined by using spectroscopic ellipsometry over the spectral range of 1.33-4.7 eV. Below the band gap, the refractive index n is found to follow the first-order Sellmeir dispersion relationship n(2)(lambda)=1+2.22 lambda (2)/(lambda (2)-0.038(2)). Strong and well-defined free excitonic features located above the band edge are clearly observed at room temperature. The intrinsic optical parameters of wurtzite ZnS such as band gaps and excitonic binding energies have been determined by fitting the absorption spectrum using a modified Elliott expression together with Lorentizan broadening. Both parameters are found to be larger than their zinc blende counterparts. (C) 2001 American Institute of Physics.
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页码:3612 / 3614
页数:3
相关论文
共 18 条
  • [1] [Anonymous], 1997, BLUE LASER DIODE GAN, DOI DOI 10.1007/978-3-662-03462-0
  • [2] Azzam R., 1977, ELLIPSOMETRY POLARIZ
  • [3] Calculation of the electron initiated impact ionization transition rate in cubic and hexagonal phase ZnS
    Bellotti, E
    Brennan, KF
    Wang, R
    Ruden, PP
    [J]. JOURNAL OF APPLIED PHYSICS, 1997, 82 (06) : 2961 - 2964
  • [4] OPTICAL PROPERTIES AND BAND STRUCTURE OF WURTZITE-TYPE CRYSTALS AND RUTILE
    CARDONA, M
    HARBEKE, G
    [J]. PHYSICAL REVIEW, 1965, 137 (5A): : 1467 - +
  • [5] REFLECTIVITY SPECTRA OF STRUCTURALLY PURE WURTZITE-TYPE ZNS IN ULTRAVIOLET AND VACUUM ULTRAVIOLET REGIONS
    EBINA, A
    FUKUNAGA, E
    TAKAHASHI, T
    [J]. PHYSICAL REVIEW B, 1975, 12 (02): : 687 - 689
  • [6] OPTICAL-PROPERTIES AND DAMAGE ANALYSIS OF GAAS SINGLE-CRYSTALS PARTLY AMORPHIZED BY ION-IMPLANTATION
    ERMAN, M
    THEETEN, JB
    CHAMBON, P
    KELSO, SM
    ASPNES, DE
    [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (10) : 2664 - 2671
  • [7] Comparison of calculated optical response in cubic and hexagonal II-VI semiconductors
    Hughes, JLP
    Sipe, JE
    [J]. PHYSICAL REVIEW B, 1998, 58 (12) : 7761 - 7767
  • [8] RAMAN-SPECTRA OF CUBIC ZN1-XCDXS
    ICHIMURA, M
    USAMI, A
    WADA, T
    FUNATO, M
    ICHINO, K
    FUJITA, S
    FUJITA, S
    [J]. PHYSICAL REVIEW B, 1992, 46 (07): : 4273 - 4276
  • [9] EFFECT OF GROWTH TEMPERATURE ON THE ELECTRONIC-ENERGY BAND AND CRYSTAL-STRUCTURE OF ZNS THIN-FILMS GROWN USING ATOMIC LAYER EPITAXY
    LAHTINEN, JA
    LU, A
    TUOMI, T
    TAMMENMAA, M
    [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (05) : 1851 - 1853
  • [10] MADELUNG OL, 1996, SEMICONDUCTOR DATA