Dissociation of vertical semiconductor diatomic artificial molecules

被引：73

作者：

Pi, M

Emperador, A

Barranco, M ^{[1
]}

Garcias, F

Muraki, K

Tarucha, S

Austing, DG

机构：

[1] Univ Barcelona, Fac Fis, Dept ECM, E-08028 Barcelona, Spain

[2] Univ Illes Balears, Fac Ciencies, Dept Fis, E-07071 Palma de Mallorca, Spain

[3] Nippon Telegraph & Tel Corp, Basic Res Labs, Kanagawa 2430198, Japan

[4] Univ Tokyo, Dept Phys, Bunkyo Ku, Tokyo 1130033, Japan

[5] Univ Tokyo, ERATO, Mesoscop Correlat Project, Bunkyo Ku, Tokyo 1130033, Japan

来源：

PHYSICAL REVIEW LETTERS | 2001年 / 87卷 / 06期

关键词：

D O I：

10.1103/PhysRevLett.87.066801

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We investigate the dissociation of few-electron circular vertical semiconductor double quantum dot artificial molecules at 0 T as a function of interdot distance. A slight mismatch introduced in the fabrication of the artificial molecules from nominally identical constituent quantum wells induces localization by offsetting the energy levels in the quantum dots by up to 2 meV, and this plays a crucial role in the appearance of the addition energy spectra as a function of coupling strength particularly in the weak coupling limit.

引用

页码：668011 / 668014

页数：4

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