Transient wavelength performance of 1.53 μm InP laser diodes for pumping of Er3+-doped solid-state lasers

被引：11

作者：

Eichhorn, Marc ^{[1
]}

机构：

[1] French German Res Inst St Louis ISL, F-68301 St Louis, France

来源：

APPLIED OPTICS | 2008年 / 47卷 / 17期

关键词：

Semiconducting indium phosphide - Solid state lasers - Pumping (laser) - Semiconductor lasers - III-V semiconductors - Diodes - Erbium compounds;

D O I：

10.1364/AO.47.003129

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The transient wavelength performance of high-power InP laser diode stacks with internal Bragg gratings is studied experimentally. Because of the wavelength selective nature of the internal grating, which is decoupled from the actual gain profile dynamics of the laser diode, the wavelength drift with respect to temperature and current is greatly reduced and steady-state conditions are reached after a short settling time of less than 50ms. (C) 2008 Optical Society of America.

引用

页码：3129 / 3133

页数：5

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