RF-MEMS switches for reconfigurable integrated circuits

被引:414
作者
Brown, ER [1 ]
机构
[1] DARPA, Elect Technol Off, Arlington, VA USA
关键词
D O I
10.1109/22.734501
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper deals with a relatively new area of radio-frequency (RF) technology based on microelectromechanical systems (MEMS). RF MEMS provides a class of new devices and components which display superior high-frequency performance relative to conventional (usually semiconductor) devices, and which enable new system capabilities, In addition, MER IS devices are designed and fabricated by techniques similar to those of very large-scale integration, and can be manufactured by traditional hatch-processing methods. In this paper, the only device addressed is the electrostatic microswitch-perhaps the paradigm RF-MEMS device. Through its superior performance characteristics, the microswitch is being developed in a number of existing circuits and systems, including radio front-ends, capacitor banks, and time-delay networks. The superior performance combined with ultra-low-power dissipation and large-scale integration should enable new system functionality as well. Two possibilities addressed here are quasi-optical beam steering and electrically reconfigurable antennas.
引用
收藏
页码:1868 / 1880
页数:13
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