Photoresist as a sacrificial layer by dissolution in acetone

被引:33
作者
Walsh, K [1 ]
Norville, J [1 ]
Tai, YC [1 ]
机构
[1] CALTECH, Pasadena, CA 91125 USA
来源
14TH IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS, TECHNICAL DIGEST | 2001年
关键词
D O I
10.1109/MEMSYS.2001.906492
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report here a detailed study of sacrificial layer dissolution of photoresist by acetone in microchannels. The effects of channel geometry as well as photoresist characteristics such as thermal cycles and UV exposure are considered and tested. Test channels were designed and fabricated ranging in height from 2 mum to 6 mum, widths from 10 mum to 80 mum, and lengths up to 2 mum. Channels were formed by encapsulating a sacrificial photoresist layer between two layers of parylene. Sacrificial layer dissolution in acetone was monitored using time lapse digital photography through a microscope and the captured data plotted and analyzed. The data support a diffusion limited model for photoresist dissolution in acetone. individual parameters in the diffusion limited model are tested and validated through a number of controlled experiments. These results and the final model are important for the design and fabrication of micro-fluidic systems based on the parylene-photoresist sacrificial system.
引用
收藏
页码:114 / 117
页数:2
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