Study of the radiation damage induced by high energy gamma-ray in CdTe detectors

被引：2

作者：

Chirco, P ^{[1
]}

Zanarini, M ^{[1
]}

Querzola, E ^{[1
]}

Zambelli, G ^{[1
]}

Dusi, W ^{[1
]}

Caroli, E ^{[1
]}

Cavallini, A ^{[1
]}

Fraboni, B ^{[1
]}

Siffert, P ^{[1
]}

Hage-Ali, M ^{[1
]}

机构：

[1] Univ Bologna, Dept Phys, I-40126 Bologna, Italy

来源：

SEMICONDUCTORS FOR ROOM-TEMPERATURE RADIATION DETECTOR APPLICATIONS II | 1997年 / 487卷

关键词：

D O I：

10.1557/PROC-487-293

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In recent years the performance of room-temperature semiconductor detectors such as CdTe are improved and they are now suitable candidates for several applications. However, some key parameters that can severely affect such perfomances have not been measured yet. Thus we have studied the damaging of a set of CdTe detectors irradiated in a Co-60 gamma-cell in a wide range of doses and dose-rates. A full characterization of the performance of irradiated detectors has been obtained by means of spectroscopic, electrostatic, photo-induced current transient spectroscopy and photo-deep level transient spectroscopy measurements to quote the energy resolution, the leakage current, the activation energy and capture cross-section of deep level defects, respectively.

引用

页码：293 / 300

页数：8