Implementation of a homogeneous high-sheet-resistance emitter in multicrystalline silicon solar cells

被引：7

作者：

Yelundur, V ^{[1
]}

Nakayashiki, K ^{[1
]}

Hilali, M ^{[1
]}

Rohatgi, A ^{[1
]}

机构：

[1] Georgia Inst Technol, Ctr Excellence Photovoltaics Res & Educ, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

来源：

CONFERENCE RECORD OF THE THIRTY-FIRST IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2005 | 2005年

关键词：

D O I：

10.1109/PVSC.2005.1488291

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Solar cell efficiency enhancement resulting from the implementation of a high-sheet-resistance emitter (95 Omega/sq.) in multicrystalline silicon solar cells with screen-printed contacts is demonstrated in this paper. Solar cells on low-cost String Ribbon Si from Evergreen Solar, Baysix mc-Si from Deutsche Solar, and high-quality float zone silicon with 45 Omega/sq. and 95 Omega/sq. phosphorus-doped n(+)-emitters are fabricated with RTP-fired screen-printed contacts and characterized to asses the impact of a high-emitter-sheet resistance emitter on cell performance. Screen-printed mc-Si solar cells show an improvement in V-oc of 4-5 mV in most cases that is attributed to the use of the high-sheet-resistance emitter. An appreciable increase in J(sc) by as much as 1.0 mA/cm(2) is also observed due to enhanced blue response identified by internal quantum efficiency measurement.

引用

页码：959 / 962

页数：4

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