High-k/Ge MOSFETs for future nanoelectronics

被引：441

作者：

Kamata, Yoshiki ^{[1
]}

机构：

[1] Toshiba Co Ltd, Corp Res & Dev Ctr, Isogo Ku, Yokohama, Kanagawa 2358522, Japan

来源：

MATERIALS TODAY | 2008年 / 11卷 / 1-2期

关键词：

D O I：

10.1016/S1369-7021(07)70350-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Recently developed high-permittttivity [k] materials have reopened the door to Ge as a channel material in metal-oxide-semiconductor field-effect transistors [MOSFETs]. High-k/Ge gate stacks are very promising for future nanscale devices. This article reviews the opportunities and challenges of high-k/Ge MOSFET technology. The most important technical issue is the passivation of the Ge surface. Physical phenomena and electrical characteristics that depend on the high-k/Ge interface are discussed on the basis of the material properties of Ge oxide to provide insights for future progress.

引用

页码：30 / 38

页数：9

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