Water molecules adsorbed on SiO2/Si(100) at 140 K to form amorphous solid water (ASW) layers were utilized as a buffer for assisting the growth of gold nanoclusters. It was shown that the average height and diameter of the clusters deposited on the silicon oxide substrate following the buffer annealing/desorption increase as the buffer layer becomes thicker and as more gold is deposited. The clusters' height and diameter were determined by tapping mode AFM and high-resolution SEM imaging, respectively. Typical heights were between 0.5 and 4.5 nm, and the diameters were in the range of 3-9 nm for ASW layer thickness of 7-100 ML and gold deposition in the range of 0.2-1.2 angstrom. The density of the clusters decreased from 65 x 10(10) to 8 x 10(10) cm(-2) in the same buffer layer thickness range. Significantly different morphology of the clusters is obtained when compared to those formed by direct deposition of gold on the silicon oxide surface and to those grown on top of Xe as buffer material.
机构:
Univ Illinois, Frederick Seitz Mat Res Lab, Dept Phys, Dept Mat Sci & Engn, Urbana, IL 61801 USAUniv Illinois, Frederick Seitz Mat Res Lab, Dept Phys, Dept Mat Sci & Engn, Urbana, IL 61801 USA
Antonov, VN
;
Weaver, JH
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Univ Illinois, Frederick Seitz Mat Res Lab, Dept Phys, Dept Mat Sci & Engn, Urbana, IL 61801 USAUniv Illinois, Frederick Seitz Mat Res Lab, Dept Phys, Dept Mat Sci & Engn, Urbana, IL 61801 USA
机构:
Max Planck Gesell, Fritz Haber Inst, Chem Phys Abt, D-14195 Berlin, GermanyMax Planck Gesell, Fritz Haber Inst, Chem Phys Abt, D-14195 Berlin, Germany
Bäumer, M
;
Freund, HJ
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机构:
Max Planck Gesell, Fritz Haber Inst, Chem Phys Abt, D-14195 Berlin, GermanyMax Planck Gesell, Fritz Haber Inst, Chem Phys Abt, D-14195 Berlin, Germany
机构:
Univ Illinois, Dept Mat Sci & Engn, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USAUniv Illinois, Dept Mat Sci & Engn, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA
Haley, C
;
Weaver, JH
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h-index: 0
机构:
Univ Illinois, Dept Mat Sci & Engn, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USAUniv Illinois, Dept Mat Sci & Engn, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA
机构:
Univ Illinois, Frederick Seitz Mat Res Lab, Dept Phys, Dept Mat Sci & Engn, Urbana, IL 61801 USAUniv Illinois, Frederick Seitz Mat Res Lab, Dept Phys, Dept Mat Sci & Engn, Urbana, IL 61801 USA
Antonov, VN
;
Weaver, JH
论文数: 0引用数: 0
h-index: 0
机构:
Univ Illinois, Frederick Seitz Mat Res Lab, Dept Phys, Dept Mat Sci & Engn, Urbana, IL 61801 USAUniv Illinois, Frederick Seitz Mat Res Lab, Dept Phys, Dept Mat Sci & Engn, Urbana, IL 61801 USA
机构:
Max Planck Gesell, Fritz Haber Inst, Chem Phys Abt, D-14195 Berlin, GermanyMax Planck Gesell, Fritz Haber Inst, Chem Phys Abt, D-14195 Berlin, Germany
Bäumer, M
;
Freund, HJ
论文数: 0引用数: 0
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机构:
Max Planck Gesell, Fritz Haber Inst, Chem Phys Abt, D-14195 Berlin, GermanyMax Planck Gesell, Fritz Haber Inst, Chem Phys Abt, D-14195 Berlin, Germany
机构:
Univ Illinois, Dept Mat Sci & Engn, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USAUniv Illinois, Dept Mat Sci & Engn, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA
Haley, C
;
Weaver, JH
论文数: 0引用数: 0
h-index: 0
机构:
Univ Illinois, Dept Mat Sci & Engn, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USAUniv Illinois, Dept Mat Sci & Engn, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA