Monolithic silicon pixel detectors in SOI technology

被引：20

作者：

Marczewski, J ^{[1
]}

Caccia, M

Domanski, K

Grabiec, P

Grodner, M

Jaroszewicz, B

Klatka, T

Kociubinski, A

Koziel, M

Kucewicz, W

Kucharski, K

Kuta, S

Niemiec, H

Sapor, M

Szelezniak, M

Tomaszewski, D

机构：

[1] Inst Electr Mat Technol, Warsaw, Poland

[2] Univ Insubria, Como, Italy

[3] Univ Min & Met Krakow, Krakow, Poland

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2005年 / 549卷 / 1-3期

关键词：

pixel sensors; SOI detectors;

D O I：

10.1016/j.nima.2005.04.035

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

This paper describes a monolithic silicon pixel detector for ionizing radiation manufactured using the Silicon On Insulator (SOI) technology. In this novel device, the sensor is implemented in a high resistive SOI bottom wafer while the associated CMOS read-out circuits are built in a SOI device layer. Preliminary measurements of simple test detectors are presented. They prove that the detector is working properly showing the typical sensitivity of a fully depleted Silicon detector. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：112 / 116

页数：5

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