Propagation characteristics of ultrahigh-Δ optical waveguide on silicon-on-insulator substrate

被引：134

作者：

Sakai, A ^{[1
]}

Hara, G ^{[1
]}

Baba, T ^{[1
]}

机构：

[1] Yokohama Natl Univ, Div Elect & Comp Engn, Hodogaya Ku, Yokohama, Kanagawa 2408501, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2001年 / 40卷 / 4B期

关键词：

SOI; optical waveguide; integrated photonics; lightwave circuit;

D O I：

10.1143/JJAP.40.L383

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A submicron rectangular waveguide with a relative refractive index difference Delta of 45% was fabricated on a silicon-on-insulator substrate, and its propagation characteristics were evaluated using the Fabry-Perot resonance method. The propagation loss was of the order of 10 cm(-1), and was dominated by light scattering at rough interfaces, However, a large modal effective index of more than 4.5 and a low bend loss of less than I dB at a 0.5-mum-radius bend were also observed. These results suggest the potential of an ultrasmall and high-density lightwave circuit, which accepts the relatively large propagation loss.

引用

页码：L383 / L385

页数：3

共 8 条

[1] Observation of light propagation in photonic crystal optical waveguides with bends [J].