Study of ultrathin Al2O3/Si(001) interfaces by using scanning reflection electron microscopy and x-ray photoelectron spectroscopy

被引：46

作者：

Kundu, M ^{[1
]}

Miyata, N ^{[1
]}

Ichikawa, M ^{[1
]}

机构：

[1] NAIR, ATP, JRCAT, Tsukuba, Ibaraki 3050046, Japan

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 11期

关键词：

D O I：

10.1063/1.1355294

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Al2O3/Si(001) interfaces were investigated using scanning reflection electron microscopy and x-ray photoelectron spectroscopy. A uniform and stoichiometric ultrathin Al2O3 film of similar to0.6 nm was grown on an atomically flat Si(001)-2 x 1 surface, and the resulting Al2O3/Si(001) interface was atomically abrupt. Furthermore, an intentional high-pressure oxidation shows that we can grow Si oxide at the Al2O3/Si(001) interface with atomic-scale uniformity as this oxidation proceeds in a layer-by-layer manner. The resulting Si oxide/Si(001) interface was also atomically abrupt. In addition, the rate of oxidation of Si at the Al2O3/Si(001) interface depends strongly on the O-2 pressure. (C) 2001 American Institute of Physics.

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页码：1517 / 1519

页数：3

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