Raman scattering characterization of group III-nitride epitaxial layers including cubic phase

被引：21

作者：

Harima, H ^{[1
]}

Inoue, T

Nakashima, S

Okumura, H

Ishida, Y

Yoshida, S

Hamaguchi, H

机构：

[1] Osaka Univ, Dept Appl Phys, Suita, Osaka 565, Japan

[2] Electrotech Lab, Ibaraki, Osaka 305, Japan

[3] Sci Univ Tokyo, Noda, Chiba 278, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 189卷

关键词：

cubic phase; composition; GaN; AlGaN; Raman scattering; photoluminescence;

D O I：

10.1016/S0022-0248(98)00320-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Raman scattering characterizations for two types of group III-nitride epitaxial layers are presented. First, GaN layers where cubic and hexagonal phases are mixed have been studied by Raman microprobe. It is shown that the dominant phase can be estimated by the observation of the transverse-optic (TO) phonon band spectra. Planar distributions of the phase-mixing ratio are examined by a two-dimensional analysis. Second, cubic AlxGa1-xN mixed crystals have been studied. With the increase of AlN molar fraction x, the TO phonon shows up-shift in the frequency. However, the shifts are much smaller than those expected from the linear interpolation, which may suggest a two-mode behavior for the TO mode of mixed crystals. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：435 / 438

页数：4

共 7 条

[1] POLARIZED RAMAN-SPECTRA IN GAN [J].