Silicon nanowire-based solar cells

被引：388

作者：

Stelzner, Th ^{[1
]}

Pietsch, M. ^{[1
]}

Andrae, G. ^{[1
]}

Falk, F. ^{[1
]}

Ose, E. ^{[1
]}

Christiansen, S. ^{[1
,2
]}

机构：

[1] Inst Photon Technol, D-07745 Jena, Germany

[2] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany

来源：

NANOTECHNOLOGY | 2008年 / 19卷 / 29期

关键词：

D O I：

10.1088/0957-4484/19/29/295203

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The fabrication of silicon nanowire-based solar cells on silicon wafers and on multicrystalline silicon thin films on glass is described. The nanowires show a strong broadband optical absorption, which makes them an interesting candidate to serve as an absorber in solar cells. The operation of a solar cell is demonstrated with n-doped nanowires grown on a p-doped silicon wafer. From a partially illuminated area of 0.6 cm(2) open-circuit voltages in the range of 230-280 mV and a short- circuit current density of 2 mA cm(-2) were obtained.

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