Aluminum wiring reliability of fluorinated amorphous carbon interlayer

被引：2

作者：

Iguchi, M ^{[1
]}

Matsubara, Y ^{[1
]}

Ito, S ^{[1
]}

Endo, K ^{[1
]}

Koyanagi, K ^{[1
]}

Kishimoto, K ^{[1
]}

Gomi, H ^{[1
]}

Tatsumi, T ^{[1
]}

Horiuchi, T ^{[1
]}

机构：

[1] NEC Corp Ltd, ULSI Device Dev Labs, Sagamihara, Kanagawa 229, Japan

来源：

LOW-DIELECTRIC CONSTANT MATERIALS IV | 1998年 / 511卷

关键词：

D O I：

10.1557/PROC-511-341

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigated the aluminum wiring reliability of fluorinated amorphous carbon (a-C:F) interlayer dielectrics (ILD) using electromigration tests at the wafer level under accelerated stress conditions with current density ranging from 25 - 32 MA/cm(2) and a the substrate temperature of 300 K. The a-C:F film is one of the low-k organic materials with a dielectric constant of 2.5. The thermal conductivity of the a-C:F film (0.108 W/m.K) is about one order lower than that of SiO2 (1.2 W/m.K). We found that joule heating effect is enhanced by the lower thermal conductivity of a-C:F and that the wiring lifetime for a-C:F ILD is about one order lower than that for SiO2 ILD under high current stress. However, when the wiring lifetime is plotted as a function of the wiring temperature, the wiring lifetimes for both a-C:F ILD and SiO2 ILD became almost the same. The degradation of the wiring lifetime for a-C:F ILD is explained by the increase of the wiring temperature which is caused from joule heating. Moreover, the activation energy of the electromigration for a-C:F ILD has the same value as that of SiO2 ILD at a temperature.

引用

页码：341 / 346

页数：6