High Performance PRAM Cell Scalable to sub-20nm technology with below 4F2 Cell Size, Extendable to DRAM Applications

被引：184

作者：

Kim, I. S. ^{[1
]}

Cho, S. L. ^{[1
]}

Im, D. H. ^{[1
]}

Cho, E. H. ^{[1
]}

Kim, D. H. ^{[1
]}

Oh, G. H. ^{[1
]}

Ahn, D. H. ^{[1
]}

Park, S. O. ^{[1
]}

Nam, S. W. ^{[1
]}

Moon, J. T. ^{[1
]}

Chung, C. H. ^{[1
]}

机构：

[1] Samsung Elect Co LTD, Semicond R&D Div, Proc Dev Team, Yongin 449711, Gyeonggi Do, South Korea

来源：

2010 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2010年

关键词：

dash-confined cell; Sb-rich Ge-Sb-Te PCM; endurance; retention;

D O I：

10.1109/VLSIT.2010.5556228

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A PRAM cell with great scalability and high speed operation capability with excellent reliability below 20nm technology was demonstrated. This has the meaning of the potential applicable to the technology area of scaling limitation of DRAM cell. We fabricated a confined PRAM cell with 7.5nmx17nm of below 4F(2). In particular, Sb-rich Ge-Sb-Te phase change material was employed for high speed operation below 30nsec. The excellent writing endurance performance was predicted to maintain up to 6.5E15cycles by reset program energy acceleration. Its data retention was 4.5 years at 85 degrees C which is enough for DRAM application.

引用

页码：203 / 204

页数：2