A porous SiC ammonia sensor

被引:75
作者
Connolly, EJ
Timmer, B
Pham, HTM
Groeneweg, J
Sarro, PM
Olthuis, W
French, PJ
机构
[1] Delft Univ Technol, Lab Elect Instrumentat & DIMES, NL-2628 CD Delft, Netherlands
[2] Univ Twente, Res Inst, NL-7500 AE Enschede, Netherlands
[3] Univ Twente, MESA, NL-7500 AE Enschede, Netherlands
来源
SENSORS AND ACTUATORS B-CHEMICAL | 2005年 / 109卷 / 01期
关键词
capacitive NH3 sensor; porous SiC;
D O I
10.1016/j.snb.2005.03.067
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
When used as the dielectric in a capacitive sensing arrangement, porous SiC has been found to be extremely sensitive to the presence of ammonia (NH3) gas. The exact sensing method is still not clear, but NH3 levels as low as similar to 0.5 ppm could be detected. We report the fabrication and preliminary characterisation of NH3 sensors based on porous SiC and Al electrodes. SiC is a very durable material and should be good for sensors in harsh environments. So far, the only NH3 sensors using SiC have been FET based, and the SiC was not porous. In our devices, SiC was deposited by PECVD on standard p-type single-crystal Si and was then made porous by electrochemical etching in 73% HF using anodisation current densities of 1-50 mA/cm(2). Preliminary data is given for our devices response to NH3 in the range 0-10 ppm NH3 in dry N-2 carrier gas. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:44 / 46
页数:3
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