A SOI-MEMS-based 3-DOF planar parallel-kinematics nanopositioning stage

This paper presents the design, kinematic and dynamic analysis, fabrication and characterization of a monolithic micro/nanopositioning three degrees-of-freedom (DOF) (XY theta) stage. The design of the proposed MEMS (micro-electro-mechanical system) stage is based on a parallel-kinematic mechanism (PKM) scheme that allows for translation in the XY plane and rotation about the Z axis, an increased motion range, and linear kinematics in the operating region (or work area) of the stage. The truss-like structure of the PKM results in higher modal frequencies by increasing the structural stiffness and reducing the moving mass of the stage. The stage is fabricated on a silicon-on-insulator (SOI) wafer using surface micromachining and deep reactive ion etching (DRIE) processes. Three sets of electrostatic linear comb drives jointly actuate the mechanism to produce motion in the X, Y and theta (rotation) directions. The fabricated stage provides a motion range of 18 mu m and 1.72 degrees at a driving voltage of 85 V. The resonant frequency of the stage under ambient conditions is 465 Hz. Additionally a high Q factor (similar to 66) is achieved from this parallel-kinematics mechanism design. (c) 2008 Elsevier B.V. All rights reserved.