Effect of growth temperature and substrate materials on epitaxial growth of coronene

被引：8

作者：

Cho, KA ^{[1
]}

Shimada, T ^{[1
]}

Sakurai, M ^{[1
]}

Koma, A ^{[1
]}

机构：

[1] Univ Tokyo, Dept Chem, Bunkyo Ku, Tokyo 113, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 84卷 / 01期

关键词：

D O I：

10.1063/1.368092

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial growth of coronene (C24H12) was studied on substrates having no dangling bonds, such as hydrogen-terminated Si(lll), MoS2, MoTe2, and muscovite by using reflection high-energy electron diffraction. It was found that the sticking coefficient and the maximum thickness of the epitaxial films are strongly dependent on the substrate materials as well as on the growth temperature. The effectiveness of molecular mechanics calculation was examined by comparing the calculated stabilization energies with the experimental results. Importance of the electronic structure of substrates has been revealed and its effect was estimated quantitatively using the Lifshitz theory. The tendency that the interfacial dispersion force is stronger for smaller band gap materials has been shown from theoretical consideration. (C) 1998 American Institute of Physics.

引用

页码：268 / 274

页数：7

共 24 条

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