Modeling of organic thin film transistors of different designs

被引:254
作者
Necliudov, PV [1 ]
Shur, MS
Gundlach, DJ
Jackson, TN
机构
[1] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12181 USA
[2] Penn State Univ, Dept Elect Engn, University Pk, PA 16802 USA
关键词
D O I
10.1063/1.1323534
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on modeling of direct current (DC) characteristics of organic pentacene thin film transistors of different designs. Our model incorporates a gate-voltage dependent mobility and highly nonlinear drain and source contact series resistances. The contact nonlinearities are especially pronounced in bottom source and drain contact thin film transistors. The model successfully reproduced both below- and above-threshold characteristics of top source and drain contact and bottom source and drain contact organic pentacene thin film transistors. (C) 2000 American Institute of Physics. [S0021-8979(00)03524-6].
引用
收藏
页码:6594 / 6597
页数:4
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