Temporal response of CZT detectors under intense irradiation

被引：21

作者：

Du, YF ^{[1
]}

LeBlanc, J ^{[1
]}

Possin, GE ^{[1
]}

Yanoff, BD ^{[1
]}

Bogdanovich, S ^{[1
]}

机构：

[1] GE Global Res Ctr, Niskayuna, NY 12309 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2003年 / 50卷 / 04期

关键词：

CdZnTe detector; medical imaging; polarization; temporal response;

D O I：

10.1109/TNS.2003.815348

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The temporal response of CdZnTe (CZT) detectors is measured under different X-ray flux, spectra, and detector bias conditions. A comprehensive model has been developed to investigate the detector response under these conditions. The calculations have been compared with our measured results. Reasonable qualitative agreement is shown between the model and measurement results. This model provides a powerful tool to understand the detector temporal response, photocurrent dependence on the irradiation intensity, bias voltage, and defect characteristics. Understanding the detector response from a microscopic level can provide a guide to improve material properties and detector device design.

引用

页码：1031 / 1035

页数：5

共 7 条

[1] Deep energy levels in CdTe and CdZnTe [J].