A general chemical conversion method to various semiconductor hollow structures

A chemical conversion method that allows the direct preparation of organized, nonocrystalline semiconductor hollow microspheres, as well as their core/shell structures was analyzed. ZnSe microspheres (0.144 g, 0.001 mol) were immersed in a AgNO3 (1M, 50 mL) or Cu(NO3)2 (1M, 50 mL) solution for 3 days. ZnSe microspheres (0.144g, 0.001 mol) were placed in a ceramic boat in a furnace and heated in air at 600°C for 3 h. XRD patterns were obtained on a Bruker D8-advance X-ray powder diffractometer with CuKa radiation (λ = 1.5418 Å). Solution-phase precipitation and gas-phase conversion processes had been employed to prepare a series of semiconductor hollow microspheres and their core/shell structures. Unique properties can be conveniently obtained from the target compounds using this conversion process.