Extraction of thermal parameters of microbolometer infrared detectors using electrical measurement

被引:5
作者
Karunasiri, G [1 ]
Gu, X [1 ]
Chen, G [1 ]
Sridhar, U [1 ]
机构
[1] Natl Univ Singapore, Dept Elect Engn, Ctr Optoelect, Singapore 119260, Singapore
来源
INFRARED TECHNOLOGY AND APPLICATIONS XXIV, PTS 1-2 | 1998年 / 3436卷
关键词
microbolometers; thermal parameters; silicon; self-heating; micromachining; infrared;
D O I
10.1117/12.328067
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The performance of microbolometer infrared sensors is typically characterized by its thermal time constant, heat capacitance, and thermal conductance. Therefore, the determination of these parameters accurately and efficiently is of considerable interest for the design and operation of microbolometer infrared sensors. Usually, the thermal time constant is obtained by measuring the frequency response of microbolometers under infrared excitation and the thermal conductance and capacity are extracted using electrical measurement. in this paper, a technique is described to extract all three parameters using a single electrical measurement. In the measurement, we have employed a Wheatstone Bridge consisting of a bolometer and three reference resistors. The resistance of the bolometer changes as a result of self-heating under an external bias which in rum generates an output voltage across the Bridge. The time dependence of the output voltage was used to extract thermal parameters of the bolometer. We believe this technique is useful in determining the thermal parameters of microbolometer based sensors.
引用
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页码:668 / 674
页数:7
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