Preparation of thin films of copper(I) bromide by rf sputtering: morphology and electrical properties

被引：24

作者：

Seguin, JL

Bendahan, M

Lollmun, G

Pasquinelli, M

Knauth, P

机构：

[1] Fac Sci Marseille St Jerome, Lab Elect & Physicochim Couches Minces, F-13397 Marseille 20, France

[2] Fac Sci Marseille St Jerome, Lab Defauts Semicond & Leurs Oxydes, F-13397 Marseille, France

[3] Fac Sci Marseille St Jerome, UMR CNRS 6518, Lab EDIFIS Met, F-13397 Marseille 20, France

来源：

THIN SOLID FILMS | 1998年 / 323卷 / 1-2期

关键词：

copper(I) bromide CuBr; current-voltage characteristics; rf sputtering;

D O I：

10.1016/S0040-6090(97)00900-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The preparation of thin films of copper(I) bromide (CuBr) on glass, silicon and copper substrates by r.f. sputtering is described, Polycrystalline films with the gamma-CuBr structure and randomly oriented grains in the micrometer range were obtained. Exponential current-voltage characteristics were interpreted by a p-type semiconductivity of CuBr thin films and related to the copper deficiency of the material. (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：31 / 36

页数：6

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