Injection-level spectroscopy of metal impurities in silicon

被引：5

作者：

Ahrenkiel, RK ^{[1
]}

Johnston, S ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

DEFECT AND IMPURITY ENGINEERED SEMICONDUCTORS II | 1998年 / 510卷

关键词：

D O I：

10.1557/PROC-510-575

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using a modified photoconductive eddy-current technique, excess carrier decay can be measured and used to identify the specific defect dominating recombination. As the dynamic range of the measurement system is linear over about three orders of magnitude, the injection-level spectroscopy technique can be performed in a single measurement for rapid defect identification.

引用

页码：575 / 581

页数：5