InSb thin films grown on GaAs substrate and their magneto-resistance effect

被引：24

作者：

Okamoto, A ^{[1
]}

Ashihara, A ^{[1
]}

Akaogi, T ^{[1
]}

Shibasaki, I ^{[1
]}

机构：

[1] Asahikasei Corp, Fuji, Shizuoka 4168501, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2001年 / 227卷

关键词：

doping; molecular beam epitaxy; antimonides;

D O I：

10.1016/S0022-0248(01)00784-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

InSb thin films were grown on GaAs (1 0 0) substrates by molecular beam epitaxy (MBE). N-type impurity (Sn and Si) doping Of InSb was investigated for the purpose of reducing its temperature dependence of resistivity. It was found that stable Sn-doped InSb thin films with large electron mobility (4.5 x 10(4) cm(2)/Vs) and sheet electron concentration (7.2 x 10(12) cm(-2)) can be fabricated. Magneto-resistance (MR) devices using these films show a large enough MR effect and an extremely small temperature dependence of resistance. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：619 / 624

页数：6