Lateral homogeneity of Schottky contacts on n-type ZnO

被引：102

作者：

von Wenckstern, H ^{[1
]}

Kaidashev, EM ^{[1
]}

Lorenz, M ^{[1
]}

Hochmuth, H ^{[1
]}

Biehne, G ^{[1
]}

Lenzner, J ^{[1
]}

Gottschalch, V ^{[1
]}

Pickenhain, R ^{[1
]}

Grundmann, M ^{[1
]}

机构：

[1] Univ Leipzig, Fak Phys & Geowissensch, Inst Expt Phys 2, D-04103 Leipzig, Germany

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 01期

关键词：

D O I：

10.1063/1.1638898

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical properties of Schottky contacts (SCs) produced ex situ on n-type ZnO single crystals and epitaxial thin films were investigated. Electron beam induced current imaging was used to study lateral variations of the current induced in the space charge region of the SC. Further, the effective barrier height was determined by current-voltage and capacitance-voltage measurements. Pd contacts prepared on ZnO thin films that had undergone treatment in a plasma-enhanced chemical vapor deposition with nitrous oxide (N2O) as ambient gas are laterally homogeneous with an effective barrier height of (600+/-30) meV. (C) 2004 American Institute of Physics.

引用

页码：79 / 81

页数：3

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