Room temperature ferromagnetic n-type semiconductor in (In1-xFex)2O3-σ -: art. no. 052503

被引:155
作者
He, J
Xu, SF
Yoo, YK
Xue, QZ
Lee, HC
Cheng, SF
Xiang, XD
Dionne, GF
Takeuchi, I
机构
[1] Intematix Corp, Moraga, CA 94556 USA
[2] SRI Int, Menlo Pk, CA 94025 USA
[3] Univ Maryland, Dept Mat Sci & Engn, College Pk, MD 20742 USA
[4] Univ Maryland, Ctr Superconduct Res, College Pk, MD 20742 USA
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.1851618
中图分类号
O59 [应用物理学];
学科分类号
摘要
The thin film synthesis and characterization of room temperature ferromagnetic semiconductor (In1-xFex)(2)O3-sigma are reported. The high thermodynamic solubility, up to 20%, of Fe ions in the In2O3 is demonstrated by a combinatorial phase mapping study where the lattice constant decreases almost linearly as Fe doping concentration increases. Extensive structural, magnetic and magneto-transport including anomalous Hall effect studies on thin film samples consistently point to a source of magnetism within the host lattice rather than from an impurity phase. (C) 2005 American Institute of Physics.
引用
收藏
页码:1 / 3
页数:3
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