Effect of halogen additives on the stability of a-Si:H films deposited at a high-growth rate

被引：5

作者：

Nishimoto, T ^{[1
]}

Takagi, T ^{[1
]}

Kondo, M ^{[1
]}

Matsuda, A ^{[1
]}

机构：

[1] Electrotech Lab, Thin Film Silicon Solar Cells Superlab, Tsukuba, Ibaraki 3058568, Japan

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2001年 / 66卷 / 1-4期

关键词：

hydrogenated amorphous silicon; halogen additive; high-growth rate;

D O I：

10.1016/S0927-0248(00)00171-9

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We deposited a-Si:H,F films at a high-growth rate (similar to 15 Angstrom /s) using a SiH4 and SIF4 gas mixture to examine the effect of halogen additives on the film stability against light exposure. Fluorinated a-Si:H films show a high conductivity over 5 x 10(-5) S/cm and the Schottky cells made with fluorinated films exhibit an improved fill factor after light-soaking. SIMS measurements show an increased oxygen incorporation into the film at a SiF4 flow of 5 seem or larger, while virtually no increase is seen when a small SiF4 flow rate of 1 sccm is used. This is presumably an indication that a small amount of SiF4 can actually help improve the stability of a-Si:H films against light exposure. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：179 / 185

页数：7

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