Correlation of surface phases with electrical behavior in thin-film CdTe devices

被引：44

作者：

McCandless, BE ^{[1
]}

Hegedus, SS

Birkmire, RW

Cunningham, D

机构：

[1] Univ Delaware, Inst Energy Convers, Newark, DE 19716 USA

[2] BP Solar, Fairfield, CA 94533 USA

来源：

THIN SOLID FILMS | 2003年 / 431卷

关键词：

cadmium telluride; X-ray diffraction; surface composition; solar cells;

D O I：

10.1016/S0040-6090(03)00266-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Glancing incidence X-ray diffraction (GIXRD) analysis of crystalline surface phases in cadmium telluride solar cells is correlated with device behavior for different processing conditions. GIXRD sampling depths are calculated for different phases and X-ray sources. Air heat treatment of CdTe films forms the native oxide CdTeO3, while treatment in CdCl2/air vapor forms CdTeO3 and CdO. Air treatment followed by CdCl2/air treatment forms surface oxides, reduces US diffusion into CdTe and improves junction performance. The CdTeO3 surface oxide limits CdCl2 concentration in the CdTe film, yet allows sufficient CdCl2 species for CdTe/CdS junction activation. In devices, residual oxide phases contribute to series resistance and current-voltage retrace hysteresis. These effects are mitigated by oxide removal and formation of a Te layer. Addition of Cu to the contact followed by thermal treatment increases open circuit voltage. Optimal cell performance is obtained for Cu/(Cu+Te) atomic ratio = 0.7. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：249 / 256

页数：8

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