Strain-induced resistance changes in CoFe/CuGMR multilayers

被引：12

作者：

Florez, SH ^{[1
]}

Gomez, RD ^{[1
]}

机构：

[1] Univ Maryland, Dept Elect & Comp Engn, College Pk, MD 20742 USA

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2003年 / 39卷 / 05期

基金：

美国国家科学基金会;

关键词：

giant magnetoresistance; magnetoelasticity; strain measurement;

D O I：

10.1109/TMAG.2003.816167

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, we study the elastoresistance of CoFe/Cu antiferromagnetically coupled giant magnetoresistive films. This refers to variations in resistivity due to strain-induced changes in magnetization. This type of phenomenon, observed on a multilayer, originates mainly from the inverse magnetostriction effect, taking place within the magnetic layers. Since these magnetizations are coupled, strain induces an overall effect on the film resistivity. Our measurements reveal that these effects lead to enhanced strain sensitivity in comparison to films made of the materials the materials that compose the multilayer.

引用

页码：3411 / 3413

页数：3