Optical properties of PbTe and PbSe

被引：66

作者：

Ekuma, Chinedu E. ^{[1
]}

Singh, David J. ^{[2
]}

Moreno, J. ^{[1
]}

Jarrell, M. ^{[1
]}

机构：

[1] Louisiana State Univ, Dept Phys & Astron, Baton Rouge, LA 70803 USA

[2] Oak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA

来源：

PHYSICAL REVIEW B | 2012年 / 85卷 / 08期

基金：

美国国家科学基金会;

关键词：

RESOLVED UV PHOTOEMISSION; IV-VI SEMICONDUCTORS; LEAD CHALCOGENIDES; BAND-STRUCTURE; TEMPERATURE-DEPENDENCE; ELECTRONIC-STRUCTURE; ENERGY GAPS; TRANSPORT PHENOMENA; CURRENT CARRIERS; SNTE;

D O I：

10.1103/PhysRevB.85.085205

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report optical properties of PbTe and PbSe as obtained from first-principles calculations with the Tran-Blaha modified Becke-Johnson potential. The results are discussed in relation to existing experimental data, particularly in relation to the temperature dependence of the band gap.

引用

页数：7

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