Luminescence related processes in semiconductor nanocrystals - The strong confinement regime

被引:61
作者
Jungnickel, V
Henneberger, F
机构
[1] Humboldt-Universität zu Berlin, Institut für Physik, 10115 Berlin
关键词
semiconductor nanocrystals; strong confinement;
D O I
10.1016/0022-2313(96)00058-0
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
This paper summarizes systematic studies on the luminescence from CdSe nanocrystals in the situation of strong zero-dimensional confinement. We discuss the role of surface and defect states, the origin of the photo-darkening and demonstrate by calorimetric adsorption measurements that the internal quantum efficiency is in the range of some 10%. The lifetimes of the intrinsic excitations are strongly size-dependent. While the radiative recombination (approximate to 1 ns) is dominant for larger nanocrystals, we observe a dramatic increase of the non-radiative rate below 4 nm as a result of the reduced volume to surface ratio. The combination of ultra-fast and size-selective excitation allows us to observe a progression of sharp LO-phonon lines signifying the zero-dimensional character of the nanocrystals and providing information on the strength of the phonon coupling and the homogeneous width of the quantum-confined ground state.
引用
收藏
页码:238 / 252
页数:15
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