Luminescence of silicon implanted with phosphorus

被引：3

作者：

Arguirov, T

Kittler, M

Seifert, W

Bolze, D

Ehwald, KE

Formanek, P

Reif, J

机构：

[1] IHP, BTU Joint Lab, DE-03044 Cottbus, Germany

[2] BTU Cottbus, Lehrstuhl Expt Phys 2, DE-03044 Cottbus, Germany

[3] IHP, DE-15236 Frankfurt, Germany

来源：

GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY | 2004年 / 95-96卷

关键词：

crystal defects; phosphorus implantation; photoluminescence; silicon;

D O I：

10.4028/www.scientific.net/SSP.95-96.289

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We applied photoluminescence and transmission electron microscopy (TEM) to characterise phosphorous implanted samples after annealing. The implantation was carried out at 750 keV with doses ranging between 1 x 10(13) cm(-2) and 2 x 10(14) cm(-2). We show that room temperature luminescence can be used for non-destructive monitoring of implanted samples. The implantation defects were studied by TEM. The photoluminescence spectra taken at 80 K indicate a considerable D-band radiation related to these defects. The room temperature spectra are found to depend strongly on the annealing treatment performed (RTA vs. furnace annealing). The hand-to-hand luminescence does not show quenching, but instead increases upon increase of temperature for the highest implantation dose.

引用

页码：289 / 294

页数：6

共 10 条

[1] Temperature behaviour of photoluminescence and electron-beam-induced current recombination behaviour of extended defects in solar grade silicon [J].