Electromechanical properties and self-polarization in relaxor Pb(Mg1/3Nb2/3)O3 thin films

被引:74
作者
Kighelman, Z [1 ]
Damjanovic, D [1 ]
Setter, N [1 ]
机构
[1] Swiss Fed Inst Technol, EPFL, Dept Mat, Ceram Lab, CH-1015 Lausanne, Switzerland
关键词
D O I
10.1063/1.1331339
中图分类号
O59 [应用物理学];
学科分类号
摘要
Pyrochlore free Pb(Mg1/3Nb2/3)O-3 (PMN) thin films were prepared from alkoxide-based solution precursors. The influence of different seeding layers and chemical solution on the microstructures is shown. Dielectric, electrostrictive, and piezoelectric properties of the films were characterized in detail. Films show relaxor-like behavior, but with dielectric permittivity which is low (around 4000 at peak) compared to bulk ceramics and single crystals. Several parameters which might be responsible for this lower permittivity are suggested. Electrostrictive coefficients, M and Q, were determined by measuring strain S and polarization P as a function of the electric field (E-ac). At large fields (>2.6x10(6) V/m), S vs P-2 appears to deviate from linear behavior possibly suggesting that the electrostrictive coefficient Q becomes nonlinear in this field range. Investigated as-prepared PMN films exhibit piezoelectric response in the absence of a dc electric field (d(33)=8-20 pm/V). The value of the associated self-polarization in the films is estimated and its presence confirmed by zero-field pyroelectric measurements. The self-polarization and the piezoelectric coefficient are strong functions of the ac field amplitude. Asymmetry of S vs E-ac and d(33) vs E-dc loops are related to the self-polarization. An ac field induces shift in P vs E loops along the field axis. This increase in the coercive field is associated, through a simple model, with the presence of the self-polarization. (C) 2001 American Institute of Physics.
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页码:1393 / 1401
页数:9
相关论文
共 41 条
[1]   Epitaxial Pb(Mg1/3Nb2/3)O3 thin films synthesized by metal-organic chemical vapor deposition [J].
Bai, GR ;
Streiffer, SK ;
Baumann, PK ;
Auciello, O ;
Ghosh, K ;
Stemmer, S ;
Munkholm, A ;
Thompson, C ;
Rao, RA ;
Eom, CB .
APPLIED PHYSICS LETTERS, 2000, 76 (21) :3106-3108
[2]   Niobium(V) alkoxides.: Synthesis, structure, and characterization of [Nb(μ-OCH2CH3)(OCH2C(CH3)3)4]2, {[H3CC(CH2O)(CH2-μ-O)(C(O)2)]Nb2(μ-O)(OCH2CH3)5}2, and {[H3CC(CH2O)2(CH2-μ-O)]Nb(OCH2CH3)2}2 for production of mixed metal oxide thin films [J].
Boyle, TJ ;
Alam, TM ;
Dimos, D ;
Moore, GJ ;
Buchheit, CD ;
Al-Shareef, HN ;
Mechenbier, ER ;
Bear, BR ;
Ziller, JW .
CHEMISTRY OF MATERIALS, 1997, 9 (12) :3187-3198
[3]  
BUTCHER SJ, 1993, 3RD P EUR CER SOC C, V2, P121
[4]   Influence of oxygen content on dielectric and electromechanical properties of Pb(Mg1/3Nb2/3)O3 thin films [J].
Catalan, G ;
Corbett, MH ;
Bowman, RM ;
Gregg, JM .
APPLIED PHYSICS LETTERS, 1999, 74 (20) :3035-3037
[5]   LOW-TEMPERATURE ROUTE TO LEAD MAGNESIUM NIOBATE [J].
CHAPUT, F ;
BOILOT, JP ;
LEJEUNE, M ;
PAPIERNIK, R ;
HUBERTPFALZGRAF, LG .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1989, 72 (08) :1355-1357
[6]   DIELECTRIC AND PYROELECTRIC PROPERTIES IN THE PB(MG1/3NB2/3)O3-PBTIO3 SYSTEM [J].
CHOI, SW ;
SHROUT, TR ;
JANG, SJ ;
BHALLA, AS .
FERROELECTRICS, 1989, 100 :29-38
[7]   The effect of target crystallography on the growth of Pb(Mg1/3Nb2/3)O3 thin films using pulsed laser deposition [J].
Corbett, MH ;
Catalan, G ;
Bowman, RM ;
Gregg, JM .
JOURNAL OF MATERIALS RESEARCH, 1999, 14 (06) :2355-2358
[8]  
Daglish M, 1998, INTEGR FERROELECTR, V22, P993
[9]  
EICHORST DJ, 1991, THESIS U ILLINOIS UR
[10]   THIN-LAYER DIELECTRICS IN THE PB[(MG1/3NB2/3)1-XTIX]O3 SYSTEM [J].
FRANCIS, LF ;
PAYNE, DA .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1991, 74 (12) :3000-3010