Band diagram and carrier conduction mechanism in ZrO2/Zr-silicate/Si MIS structure fabricated by pulsed-laser-ablation deposition

被引：39

作者：

Yamaguchi, T ^{[1
]}

Satake, H ^{[1
]}

Fukushima, N ^{[1
]}

Toriumi, A ^{[1
]}

机构：

[1] Toshiba Co Ltd, Adv LSI Technol Lab, Isogo Ku, Yokohama, Kanagawa 2358522, Japan

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST | 2000年

关键词：

D O I：

10.1109/IEDM.2000.904249

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

On the basis of the experimental results of XPS analysis and the carrier separation, the band diagram and carrier transport mechanism in ZrO2 dielectrics were clarified for the first time. ZrO2-MIS structure consists of ZrO2 layer and the interfacial Zr-silicate layer. The carrier conduction in ZrO2 layer is dominant in the ZrO2/Zr-silicate/Si MIS structure. It was found that the hole conduction mechanism is different from electron conduction mechanism in ZrO2 gate dielectrics.

引用

页码：19 / 22

页数：4

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