Bandgap energy of graphite-like hexagonal boron nitride

被引：188

作者：

Solozhenko, VL

Lazarenko, AG

Petitet, JP

Kanaev, AV ^{[1
]}

机构：

[1] Univ Paris 13, Inst Galilee, CNRS, LIMHP,Lab Ingn Mat & Hautes Press, F-93430 Villetaneuse, France

[2] Natl Acad Sci Ukraine, Inst Superhard Mat, UA-04074 Kiev, Ukraine

[3] Kharkov State Politech Univ, UA-61002 Kharkov, Ukraine

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 2001年 / 62卷 / 07期

关键词：

semiconductors; luminescence;

D O I：

10.1016/S0022-3697(01)00030-0

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We have carried out laser-induced fluorescence measurements of hBN powder at room temperature under different environmental conditions (dry powder and suspensions in water or ethanol). From fluorescence excitation spectra, the absorption onset, related to the bandgap energy of this indirect gap semiconductor, has been precisely determined to be E-g = 4.02 +/- 0.01 eV. This result is of importance in view of large discrepancies in previously published data. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：1331 / 1334

页数：4

共 13 条

[1] OPTICAL PROPERTIES OF THIN BORON NITRIDE FILMS [J].