NO sensing characteristics of ZnO-NiO junction structure with intervening SiO2 layer

被引：4

作者：

Koshizaki, N ^{[1
]}

Suga, K ^{[1
]}

Yasumoto, K ^{[1
]}

机构：

[1] YOKOHAMA RUBBER CO LTD,HIRATSUKA,KANAGAWA 254,JAPAN

来源：

DENKI KAGAKU | 1996年 / 64卷 / 12期

关键词：

junction structure; oxide semiconductor; nitrogen oxide sensor; SiO2; intervention;

D O I：

10.5796/kogyobutsurikagaku.64.1293

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The NO sensing characteristics of junction structure composed of n-type Al2O3-doped ZnO, p-type NiO and intervening SiO2 layer at the junction interface are investigated. We studied the effects of junction structure configuration and the thicknesses of the intervening and component layers on the gas sensing characteristics. The ultrathin intervening SiO2 layer at the junction interface has positive effects on NO sensing characteristics. The detection mechanism is considered to result from the combination of the usual semiconductive process and the heterojunction detection process.

引用

页码：1293 / 1296

页数：4

共 6 条

[1]

KOSHIZAKI N, 1994, 5TH INT M CHEM SENS, P508

[2] SELECTIVE CO GAS SENSING MECHANISM WITH CUO/ZNO HETEROCONTACT [J].