Fabrication of high-mobility Ge p-channel MOSFETs on Si substrates

被引：38

作者：

Reinking, D

Kammler, R

Hoffmann, N

Horn-von Hoegen, M

Hofmann, KR

机构：

[1] Univ Hannover, Inst Halbleitertech, D-30167 Hannover, Germany

[2] Univ Hannover, Inst Festkorperphys, D-30167 Hannover, Germany

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 06期

关键词：

D O I：

10.1049/el:19990349

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first fabrication of Ge p-channel MOSFETs (p-MOSFETs) on Si substrates is reported. A CMOS compatible process based on relaxed Ge layers grown on Si(111) substrates by surfactant-mediated epitaxy (SME) was used. The non-optimised low temperature process yielded normally-off Ge p-MOSFETs with record channel drift mobilities of 430 cm(2/)Vs.

引用

页码：503 / 504

页数：2

共 5 条

[1] Surfactant-grown low-doped germanium layers on silicon with high electron mobilities [J].