Impact of lanthanum on PZT resistance degradation

被引：6

作者：

Chentir, M. T. ^{[1
,2
]}

Bouyssou, E. ^{[2
]}

Ventura, L. ^{[1
]}

Guegan, G. ^{[2
]}

Anceau, C. ^{[2
]}

机构：

[1] Univ Tours, Tours Lab Microelect Puissance, F-37041 Tours, France

[2] STMicroelect, F-37071 Tours 2, France

来源：

FERROELECTRICS | 2008年 / 362卷

关键词：

D O I：

10.1080/00150190802006806

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This work presents the impact of lanthanum doping on PZT leakage current behavior by comparing the amplitude of the maximum Schottky barrier lowering between PZT and lanthanum doped PZT(PLZT). PZT and PLZT films have been also estimated in terms of capacitors reliability. The time to breakdown distribution obtained with PLZT capacitors drifts by a factor 2.5, which tends to demonstrate also the benefits of lanthanum doping on improving reliability.

引用

页码：123 / 127

页数：5

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