Preparation of GaN film of low carrier density by the HWE system with Ga and TMG sources

被引：4

作者：

Chu, SC

Fujimura, K

Suzuki, D

Sakakibara, S

Tanoue, F

Ishida, A

Ishino, K

Aiki, K

Fujiyasu, H

机构：

[1] Shizuoka Univ, Fac Engn, Hamamatsu, Shizuoka 432, Japan

[2] Suzuki Co, Miyakoda Tech Ctr, Hamamatsu, Shizuoka 431, Japan

[3] ASTI Co, Miyakoda Tech Ctr, Hamamatsu, Shizuoka 431, Japan

[4] Yamaha Co, Iwata 438, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 189卷

基金：

日本学术振兴会;

关键词：

GaN; HWE; carrier density; TMG; buffer layer; thermal treatment;

D O I：

10.1016/S0022-0248(98)00288-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

GaN films with low carrier density of the order of 10(16) cm(-3), smooth and mirror like surface morphology, and good crystalline quality were prepared on a (0 0 0 1)sapphire substrate by the hot wall epitaxy system using Ga metal and TMG gas source, respectively. To investigate the dependence of the quality on the thickness of the GaN buffer layer, several ramping rates were performed between the growth of, the buffer and the epi-layer. A simple model is proposed to explain the results. (C) 1998 Published by Elsevier Science B.V. All rights reserved.

引用

页码：340 / 343

页数：4

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ISHIDA, A ;

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[3]

ISIDA A, 1996, P INT S BLUE LASER L

[4]

NAKAMURA S, 1997, BLUE LASER DIODE, P1

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