Atmospheric pressure chemical vapour deposition of SnSe and SnSe2 thin films on glass

被引：163

作者：

Boscher, Nicolas D. ^{[1
]}

Carmalt, Claire J. ^{[1
]}

Palgrave, Robert G. ^{[1
]}

Parkin, Ivan P. ^{[1
]}

机构：

[1] UCL, Dept Chem, London WC1H 0AJ, England

来源：

THIN SOLID FILMS | 2008年 / 516卷 / 15期

基金：

英国工程与自然科学研究理事会;

关键词：

chemical vapour deposition; tin selenide; thin film; light absorbing layer;

D O I：

10.1016/j.tsf.2007.08.100

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Atmospheric pressure chemical vapour deposition of tin monoselenide and tin diselenide films on glass substrate was achieved by reaction of diethyl selenide with tin tetrachloride at 350-650 degrees C. X-ray diffraction showed that all the films were crystalline and matched the reported pattern for SnSe and/or SnSe2. Wavelength dispersive analysis by X-rays show a variable Sn:Se ratio from 1:1 to 1:2 depending on conditions. The deposition temperature, flow rates and position on the substrate determined whether mixed SnSe-SnSe2, pure SnSe or pure SnSe2 thin films could be obtained. SnSe films were obtained at 650 degrees C with a SnCl4 to Et2Se ratio greater than 10. The SnSe films were silver-black in appearance and adhesive. SnSe2 films were obtained at 600-650 degrees C they had a black appearance and were composed of 10 to 80 mu m sized adherent crystals. Films of SnSe only 100 nm thick showed complete absorbtion at 300-1100 nm. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：4750 / 4757

页数：8

共 31 条

[1] Growth and microstructural characterization of SnSe-SnSe2 composite [J].