Automated angle-scanning photoemission end-station with molecular beam epitaxy at KEK-PF BL-1C

被引:7
作者
Ono, K
Yeom, HW
Horiba, K
Oh, JH
Nakazono, S
Kihara, T
Nakamura, K
Mano, T
Mizuguchi, M
Oshima, M
Aiura, Y
Kakizaki, A
机构
[1] Univ Tokyo, Grad Sch Engn, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan
[2] Yonsei Univ, Dept Phys, Seoul 120749, South Korea
[3] Yonsei Univ, Atom Scale Surface Res Ctr, Seoul 120749, South Korea
[4] Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan
[5] High Energy Accelerator Res Org, Inst Mat Struct Sci, Tsukuba, Ibaraki 3050801, Japan
关键词
angle-resolved photoemission; quantum nanostructure; molecular beam epitaxy;
D O I
10.1016/S0168-9002(01)00734-3
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
In order to satisfy demands to study the electronic structure of quantum nanostructures, a VUV beamline and a high-resolution and high-throughput photoemission end-station combined with a molecular beam epitaxy (MBE) system have been constructed at the BL-IC of the Photon Factory. An angle-resolved photoemission spectrometer, having high energy- and angular-resolutions; VG Microtech ARUPS10, was installed. The total energy resolution of 31 meV at the 60 eV of photon energy is achieved. For the automated angle-scanning photoemission, the electron spectrometer mounted on a two-axis goniometer can be rotated in vacuum by the computer-cont rolled stepping motors. Another distinctive feature of this end-station is a connection to a MBE chamber in ultahigh vacuum (UHV). In this system, MBE-grown samples can be transferred into the photoemission chamber without breaking UHV. Photoemission spectra of MBE-grown GaAs(001) surfaces were measured with high-resolution and bulk and surface components are clearly resolved. (C) 2001 Elsevier Science B.V, All rights reserved.
引用
收藏
页码:1497 / 1501
页数:5
相关论文
共 4 条
[1]   Atomic structure of the GaAs(001)-(2 x 4) surface resolved using scanning tunneling microscopy and first-principles theory [J].
LaBella, VP ;
Yang, H ;
Bullock, DW ;
Thibado, PM ;
Kratzer, P ;
Scheffler, M .
PHYSICAL REVIEW LETTERS, 1999, 83 (15) :2989-2992
[2]   GaAs equilibrium crystal shape from first principles [J].
Moll, N ;
Kley, A ;
Pehlke, E ;
Scheffler, M .
PHYSICAL REVIEW B, 1996, 54 (12) :8844-8855
[3]  
ONO K, IN PRESS NUCL INST A
[4]  
ONO K, IN PRESS P 25 INT C